STU10P6F6
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Product Paramters
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Vgs (Max)
- ±20V
- Technology
- MOSFET (Metal Oxide)
- Supplier Device Package
- IPAK (TO-251)
- Series
- DeepGATE™, STripFET™ VI
- Rds On (Max) @ Id, Vgs
- 160 mOhm @ 5A, 10V
- Power Dissipation (Max)
- 35W (Tc)
- Packaging
- Tube
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Other Names
- 497-13884-5
- Operating Temperature
- 175°C (TJ)
- Mounting Type
- Through Hole
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds
- 340pF @ 48V
- Gate Charge (Qg) (Max) @ Vgs
- 6.4nC @ 10V
- FET Type
- P-Channel
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Drain to Source Voltage (Vdss)
- 60V
- Detailed Description
- P-Channel 60V 10A (Tc) 35W (Tc) Through Hole IPAK (TO-251)
- Current - Continuous Drain (Id) @ 25°C
- 10A (Tc)
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