STU5N65M6
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Product Paramters
- Vgs(th) (Max) @ Id
- 3.75V @ 250µA
- Vgs (Max)
- ±25V
- Technology
- MOSFET (Metal Oxide)
- Supplier Device Package
- I-PAK
- Series
- MDmesh™ M6
- Rds On (Max) @ Id, Vgs
- 1.3 Ohm @ 2A, 10V
- Power Dissipation (Max)
- 45W (Tc)
- Packaging
- Tube
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Mounting Type
- Through Hole
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds
- 170pF @ 100V
- Gate Charge (Qg) (Max) @ Vgs
- 5.1nC @ 10V
- FET Type
- N-Channel
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Drain to Source Voltage (Vdss)
- 650V
- Detailed Description
- N-Channel 650V 4A (Tc) 45W (Tc) Through Hole I-PAK
- Current - Continuous Drain (Id) @ 25°C
- 4A (Tc)
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