TN5325N3-G
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Product Paramters
- Vgs(th) (Max) @ Id
- 2V @ 1mA
- Vgs (Max)
- ±20V
- Technology
- MOSFET (Metal Oxide)
- Supplier Device Package
- TO-92-3
- Series
- -
- Rds On (Max) @ Id, Vgs
- 7 Ohm @ 1A, 10V
- Power Dissipation (Max)
- 740mW (Ta)
- Packaging
- Bulk
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Operating Temperature
- -
- Mounting Type
- Through Hole
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Manufacturer Standard Lead Time
- 5 Weeks
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds
- 110pF @ 25V
- FET Type
- N-Channel
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Drain to Source Voltage (Vdss)
- 250V
- Detailed Description
- N-Channel 250V 215mA (Ta) 740mW (Ta) Through Hole TO-92-3
- Current - Continuous Drain (Id) @ 25°C
- 215mA (Ta)
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