TP0620N3-G
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Product Paramters
- Vgs(th) (Max) @ Id
- 2.4V @ 1mA
- Vgs (Max)
- ±20V
- Technology
- MOSFET (Metal Oxide)
- Supplier Device Package
- TO-92-3
- Series
- -
- Rds On (Max) @ Id, Vgs
- 12 Ohm @ 200mA, 10V
- Power Dissipation (Max)
- 1W (Ta)
- Packaging
- Bulk
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Mounting Type
- Through Hole
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds
- 150pF @ 25V
- FET Type
- P-Channel
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 5V, 10V
- Drain to Source Voltage (Vdss)
- 200V
- Detailed Description
- P-Channel 200V 175mA (Tj) 1W (Ta) Through Hole TO-92-3
- Current - Continuous Drain (Id) @ 25°C
- 175mA (Tj)
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