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CSD23202W10T
MOSFET P-CH 12V 2.2A 4DSBGA
Lead free / RoHS Compliant
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Product Paramters
- Vgs(th) (Max) @ Id
- 900mV @ 250µA
- Vgs (Max)
- -6V
- Technology
- MOSFET (Metal Oxide)
- Supplier Device Package
- 4-DSBGA (1x1)
- Series
- NexFET™
- Rds On (Max) @ Id, Vgs
- 53 mOhm @ 500mA, 4.5V
- Power Dissipation (Max)
- 1W (Ta)
- Packaging
- Cut Tape (CT)
- Package / Case
- 4-UFBGA, DSBGA
- Other Names
- 296-38338-1
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Mounting Type
- Surface Mount
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Manufacturer Standard Lead Time
- 35 Weeks
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds
- 512pF @ 6V
- Gate Charge (Qg) (Max) @ Vgs
- 3.8nC @ 4.5V
- FET Type
- P-Channel
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 1.5V, 4.5V
- Drain to Source Voltage (Vdss)
- 12V
- Detailed Description
- P-Channel 12V 2.2A (Ta) 1W (Ta) Surface Mount 4-DSBGA (1x1)
- Current - Continuous Drain (Id) @ 25°C
- 2.2A (Ta)
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