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CSD19536KTT
MOSFET N-CH 100V 200A TO263
Contains lead / RoHS Compliant
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Product Paramters
- Vgs(th) (Max) @ Id
- 3.2V @ 250µA
- Vgs (Max)
- ±20V
- Technology
- MOSFET (Metal Oxide)
- Supplier Device Package
- DDPAK/TO-263-3
- Series
- NexFET™
- Rds On (Max) @ Id, Vgs
- 2.4 mOhm @ 100A, 10V
- Power Dissipation (Max)
- 375W (Tc)
- Packaging
- Tape & Reel (TR)
- Package / Case
- TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
- Other Names
- 296-47254-2
CSD19536KTT-ND
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Mounting Type
- Surface Mount
- Moisture Sensitivity Level (MSL)
- 2 (1 Year)
- Manufacturer Standard Lead Time
- 35 Weeks
- Lead Free Status / RoHS Status
- Contains lead / RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds
- 12000pF @ 50V
- Gate Charge (Qg) (Max) @ Vgs
- 153nC @ 10V
- FET Type
- N-Channel
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 6V, 10V
- Drain to Source Voltage (Vdss)
- 100V
- Detailed Description
- N-Channel 100V 200A (Ta) 375W (Tc) Surface Mount DDPAK/TO-263-3
- Current - Continuous Drain (Id) @ 25°C
- 200A (Ta)
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