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APT66M60B2
Microsemi
MOSFET N-CH 600V 66A T-MAX
Lead free / RoHS Compliant
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Product Paramters
- Vgs(th) (Max) @ Id
- 5V @ 2.5mA
- Vgs (Max)
- ±30V
- Technology
- MOSFET (Metal Oxide)
- Supplier Device Package
- T-MAX™ [B2]
- Series
- -
- Rds On (Max) @ Id, Vgs
- 100 mOhm @ 33A, 10V
- Power Dissipation (Max)
- 1135W (Tc)
- Packaging
- Tube
- Package / Case
- TO-247-3 Variant
- Other Names
- APT66M60B2MI
APT66M60B2MI-ND
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Mounting Type
- Through Hole
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Manufacturer Standard Lead Time
- 23 Weeks
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds
- 13190pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs
- 330nC @ 10V
- FET Type
- N-Channel
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Drain to Source Voltage (Vdss)
- 600V
- Detailed Description
- N-Channel 600V 70A (Tc) 1135W (Tc) Through Hole T-MAX™ [B2]
- Current - Continuous Drain (Id) @ 25°C
- 70A (Tc)
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