APT38F80B2
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Product Paramters
- Vgs(th) (Max) @ Id
- 5V @ 2.5mA
- Vgs (Max)
- ±30V
- Technology
- MOSFET (Metal Oxide)
- Supplier Device Package
- T-MAX™ [B2]
- Series
- POWER MOS 8™
- Rds On (Max) @ Id, Vgs
- 240 mOhm @ 20A, 10V
- Power Dissipation (Max)
- 1040W (Tc)
- Packaging
- Tube
- Package / Case
- TO-247-3 Variant
- Other Names
- APT38F80B2MI
APT38F80B2MI-ND
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Mounting Type
- Through Hole
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Manufacturer Standard Lead Time
- 21 Weeks
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds
- 8070pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs
- 260nC @ 10V
- FET Type
- N-Channel
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Drain to Source Voltage (Vdss)
- 800V
- Detailed Description
- N-Channel 800V 41A (Tc) 1040W (Tc) Through Hole T-MAX™ [B2]
- Current - Continuous Drain (Id) @ 25°C
- 41A (Tc)
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