CSD19532KTT
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Product Paramters
- Voltage - Test
- 5060pF @ 50V
- Voltage - Breakdown
- DDPAK/TO-263-3
- Vgs(th) (Max) @ Id
- 5.6 mOhm @ 90A, 10V
- Vgs (Max)
- 6V, 10V
- Technology
- MOSFET (Metal Oxide)
- Series
- NexFET™
- RoHS Status
- Cut Tape (CT)
- Rds On (Max) @ Id, Vgs
- 200A (Ta)
- Polarization
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Other Names
- 296-44970-1
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Mounting Type
- Surface Mount
- Moisture Sensitivity Level (MSL)
- 2 (1 Year)
- Manufacturer Standard Lead Time
- 13 Weeks
- Manufacturer Part Number
- CSD19532KTT
- Input Capacitance (Ciss) (Max) @ Vds
- 57nC @ 10V
- IGBT Type
- ±20V
- Gate Charge (Qg) (Max) @ Vgs
- 3.2V @ 250µA
- FET Feature
- N-Channel
- Expanded Description
- N-Channel 100V 200A (Ta) 250W (Tc) Surface Mount DDPAK/TO-263-3
- Drain to Source Voltage (Vdss)
- -
- Description
- MOSFET N-CH 100V 200A DDPAK-3
- Current - Continuous Drain (Id) @ 25°C
- 100V
- Capacitance Ratio
- 250W (Tc)
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