IRF640PBF
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Product Paramters
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Vgs (Max)
- ±20V
- Technology
- MOSFET (Metal Oxide)
- Supplier Device Package
- TO-220AB
- Series
- -
- Rds On (Max) @ Id, Vgs
- 180 mOhm @ 11A, 10V
- Power Dissipation (Max)
- 125W (Tc)
- Packaging
- Bulk
- Package / Case
- TO-220-3
- Other Names
- *IRF640PBF
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Mounting Type
- Through Hole
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Manufacturer Standard Lead Time
- 18 Weeks
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds
- 1300pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs
- 70nC @ 10V
- FET Type
- N-Channel
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Drain to Source Voltage (Vdss)
- 200V
- Detailed Description
- N-Channel 200V 18A (Tc) 125W (Tc) Through Hole TO-220AB
- Current - Continuous Drain (Id) @ 25°C
- 18A (Tc)
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