MT29AZ5A3CHHWD-18AAT.84F
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Product Paramters
- Write Cycle Time - Word, Page
- -
- Voltage - Supply
- 1.7 V ~ 1.9 V
- Technology
- FLASH - NAND, Mobile LPDRAM
- Series
- Automotive, AEC-Q100
- Operating Temperature
- -40°C ~ 105°C (TA)
- Moisture Sensitivity Level (MSL)
- 3 (168 Hours)
- Memory Type
- Non-Volatile
- Memory Size
- 4Gb (512M x 8)(NAND), 8Gb (512M x 16)(LPDDR2)
- Memory Interface
- Parallel
- Memory Format
- FLASH, RAM
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Detailed Description
- FLASH - NAND, Mobile LPDRAM Memory IC 4Gb (512M x 8)(NAND), 8Gb (512M x 16)(LPDDR2) Parallel 533MHz
- Clock Frequency
- 533MHz
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- Micron Technology MT29AZ5A3CHHWD-18AAT.84F
- MT29AZ5A3CHHWD-18AAT.84F data sheet
- MT29AZ5A3CHHWD-18AAT.84F datasheet
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- Download MT29AZ5A3CHHWD-18AAT.84F datasheet
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