NTR1P02T1
AMI Semiconductor / ON Semiconductor
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Product Paramters
- Vgs(th) (Max) @ Id
- 2.3V @ 250µA
- Vgs (Max)
- ±20V
- Technology
- MOSFET (Metal Oxide)
- Supplier Device Package
- SOT-23-3 (TO-236)
- Series
- -
- Rds On (Max) @ Id, Vgs
- 180 mOhm @ 1.5A, 10V
- Power Dissipation (Max)
- 400mW (Ta)
- Packaging
- Tape & Reel (TR)
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Other Names
- NTR1P02T1OS
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Mounting Type
- Surface Mount
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Lead Free Status / RoHS Status
- Contains lead / RoHS non-compliant
- Input Capacitance (Ciss) (Max) @ Vds
- 165pF @ 5V
- Gate Charge (Qg) (Max) @ Vgs
- 2.5nC @ 5V
- FET Type
- P-Channel
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Drain to Source Voltage (Vdss)
- 20V
- Detailed Description
- P-Channel 20V 1A (Ta) 400mW (Ta) Surface Mount SOT-23-3 (TO-236)
- Current - Continuous Drain (Id) @ 25°C
- 1A (Ta)
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