PEMD12,115
NXP Semiconductors / Freescale
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Product Paramters
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- Vce Saturation (Max) @ Ib, Ic
- 150mV @ 500µA, 10mA
- Transistor Type
- 1 NPN, 1 PNP - Pre-Biased (Dual)
- Supplier Device Package
- SOT-666
- Series
- -
- Resistor - Emitter Base (R2)
- 47 kOhms
- Resistor - Base (R1)
- 47 kOhms
- Power - Max
- 300mW
- Packaging
- Tape & Reel (TR)
- Package / Case
- SOT-563, SOT-666
- Other Names
- 1727-2155-2
568-12017-2-ND
568-12316-2-ND
934056859115
PEMD12 T/R
PEMD12 T/R-ND
PEMD12,115-ND
- Mounting Type
- Surface Mount
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Manufacturer Standard Lead Time
- 13 Weeks
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Frequency - Transition
- -
- Detailed Description
- Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount SOT-666
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 80 @ 5mA, 5V
- Current - Collector Cutoff (Max)
- 1µA
- Current - Collector (Ic) (Max)
- 100mA
- Base Part Number
- MD12
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