SCT50N120
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Product Paramters
- Vgs(th) (Max) @ Id
- 3V @ 1mA
- Vgs (Max)
- +25V, -10V
- Technology
- SiCFET (Silicon Carbide)
- Supplier Device Package
- HiP247™
- Series
- -
- Rds On (Max) @ Id, Vgs
- 69 mOhm @ 40A, 20V
- Power Dissipation (Max)
- 318W (Tc)
- Packaging
- Tube
- Package / Case
- TO-247-3
- Other Names
- 497-16598-5
- Operating Temperature
- -55°C ~ 200°C (TJ)
- Mounting Type
- Through Hole
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds
- 1900pF @ 400V
- Gate Charge (Qg) (Max) @ Vgs
- 122nC @ 20V
- FET Type
- N-Channel
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 20V
- Drain to Source Voltage (Vdss)
- 1200V
- Detailed Description
- N-Channel 1200V 65A (Tc) 318W (Tc) Through Hole HiP247™
- Current - Continuous Drain (Id) @ 25°C
- 65A (Tc)
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