SI1417EDH-T1-GE3
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Product Paramters
- Vgs(th) (Max) @ Id
- 450mV @ 250µA (Min)
- Vgs (Max)
- ±12V
- Technology
- MOSFET (Metal Oxide)
- Supplier Device Package
- SC-70-6 (SOT-363)
- Series
- TrenchFET®
- Rds On (Max) @ Id, Vgs
- 85 mOhm @ 3.3A, 4.5V
- Power Dissipation (Max)
- 1W (Ta)
- Packaging
- Tape & Reel (TR)
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Other Names
- SI1417EDH-T1-GE3TR
SI1417EDHT1GE3
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Mounting Type
- Surface Mount
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Gate Charge (Qg) (Max) @ Vgs
- 8nC @ 4.5V
- FET Type
- P-Channel
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 1.8V, 4.5V
- Drain to Source Voltage (Vdss)
- 12V
- Detailed Description
- P-Channel 12V 2.7A (Ta) 1W (Ta) Surface Mount SC-70-6 (SOT-363)
- Current - Continuous Drain (Id) @ 25°C
- 2.7A (Ta)
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