SI2334DS-T1-GE3
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Product Paramters
- Vgs(th) (Max) @ Id
- 1V @ 250µA
- Vgs (Max)
- ±8V
- Technology
- MOSFET (Metal Oxide)
- Supplier Device Package
- SOT-23-3 (TO-236)
- Series
- TrenchFET®
- Rds On (Max) @ Id, Vgs
- 44 mOhm @ 4.2A, 4.5V
- Power Dissipation (Max)
- 1.3W (Ta), 1.7W (Tc)
- Packaging
- Cut Tape (CT)
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Other Names
- SI2334DS-T1-GE3CT
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Mounting Type
- Surface Mount
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds
- 634pF @ 15V
- Gate Charge (Qg) (Max) @ Vgs
- 10nC @ 4.5V
- FET Type
- N-Channel
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 2.5V, 4.5V
- Drain to Source Voltage (Vdss)
- 30V
- Detailed Description
- N-Channel 30V 4.9A (Tc) 1.3W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
- Current - Continuous Drain (Id) @ 25°C
- 4.9A (Tc)
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