SI4398DY-T1-E3
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Product Paramters
- Vgs(th) (Max) @ Id
- 3V @ 250µA
- Vgs (Max)
- ±20V
- Technology
- MOSFET (Metal Oxide)
- Supplier Device Package
- 8-SO
- Series
- -
- Rds On (Max) @ Id, Vgs
- 2.8 mOhm @ 25A, 10V
- Power Dissipation (Max)
- 1.6W (Ta)
- Packaging
- Tape & Reel (TR)
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Other Names
- SI4398DY-T1-E3TR
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Mounting Type
- Surface Mount
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds
- 5620pF @ 10V
- Gate Charge (Qg) (Max) @ Vgs
- 50nC @ 4.5V
- FET Type
- N-Channel
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Drain to Source Voltage (Vdss)
- 20V
- Detailed Description
- N-Channel 20V 19A (Ta) 1.6W (Ta) Surface Mount 8-SO
- Current - Continuous Drain (Id) @ 25°C
- 19A (Ta)
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