SIR788DP-T1-GE3
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Product Paramters
- Vgs(th) (Max) @ Id
- 2.5V @ 250µA
- Vgs (Max)
- ±20V
- Technology
- MOSFET (Metal Oxide)
- Supplier Device Package
- PowerPAK® SO-8
- Series
- SkyFET®, TrenchFET®
- Rds On (Max) @ Id, Vgs
- 3.4 mOhm @ 20A, 10V
- Power Dissipation (Max)
- 5W (Ta), 48W (Tc)
- Packaging
- Original-Reel®
- Package / Case
- PowerPAK® SO-8
- Other Names
- SIR788DP-T1-GE3DKR
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Mounting Type
- Surface Mount
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds
- 2873pF @ 15V
- Gate Charge (Qg) (Max) @ Vgs
- 75nC @ 10V
- FET Type
- N-Channel
- FET Feature
- Schottky Diode (Body)
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Drain to Source Voltage (Vdss)
- 30V
- Detailed Description
- N-Channel 30V 60A (Tc) 5W (Ta), 48W (Tc) Surface Mount PowerPAK® SO-8
- Current - Continuous Drain (Id) @ 25°C
- 60A (Tc)
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