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SI7850DP-T1-E3
Electro-Films (EFI) / Vishay
MOSFET N-CH 60V 6.2A PPAK SO-8
Lead free / RoHS Compliant
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Product Paramters
- Vgs(th) (Max) @ Id
- 3V @ 250µA
- Vgs (Max)
- ±20V
- Technology
- MOSFET (Metal Oxide)
- Supplier Device Package
- PowerPAK® SO-8
- Series
- TrenchFET®
- Rds On (Max) @ Id, Vgs
- 22 mOhm @ 10.3A, 10V
- Power Dissipation (Max)
- 1.8W (Ta)
- Packaging
- Original-Reel®
- Package / Case
- PowerPAK® SO-8
- Other Names
- SI7850DP-T1-E3DKR
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Mounting Type
- Surface Mount
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Manufacturer Standard Lead Time
- 33 Weeks
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Gate Charge (Qg) (Max) @ Vgs
- 27nC @ 10V
- FET Type
- N-Channel
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Drain to Source Voltage (Vdss)
- 60V
- Detailed Description
- N-Channel 60V 6.2A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8
- Current - Continuous Drain (Id) @ 25°C
- 6.2A (Ta)
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