STFI10N65K3
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Product Paramters
- Vgs(th) (Max) @ Id
- 4.5V @ 100µA
- Vgs (Max)
- ±30V
- Technology
- MOSFET (Metal Oxide)
- Supplier Device Package
- I2PAKFP (TO-281)
- Series
- SuperMESH3™
- Rds On (Max) @ Id, Vgs
- 1 Ohm @ 3.6A, 10V
- Power Dissipation (Max)
- 35W (Tc)
- Packaging
- Tube
- Package / Case
- TO-262-3 Full Pack, I²Pak
- Other Names
- 497-13578-5
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Mounting Type
- Through Hole
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds
- 1180pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs
- 42nC @ 10V
- FET Type
- N-Channel
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Drain to Source Voltage (Vdss)
- 650V
- Detailed Description
- N-Channel 650V 10A (Tc) 35W (Tc) Through Hole I2PAKFP (TO-281)
- Current - Continuous Drain (Id) @ 25°C
- 10A (Tc)
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