STP160N4LF6
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Product Paramters
- Vgs(th) (Max) @ Id
- 1V @ 250µA (Min)
- Vgs (Max)
- ±20V
- Technology
- MOSFET (Metal Oxide)
- Supplier Device Package
- TO-220
- Series
- DeepGATE™, STripFET™ VI
- Rds On (Max) @ Id, Vgs
- 2.9 mOhm @ 60A, 10V
- Power Dissipation (Max)
- 150W (Tc)
- Packaging
- Tube
- Package / Case
- TO-220-3
- Other Names
- 497-15556-5
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Mounting Type
- Through Hole
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds
- 8130pF @ 20V
- Gate Charge (Qg) (Max) @ Vgs
- 181nC @ 10V
- FET Type
- N-Channel
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 5V, 10V
- Drain to Source Voltage (Vdss)
- 40V
- Detailed Description
- N-Channel 40V 120A (Tc) 150W (Tc) Through Hole TO-220
- Current - Continuous Drain (Id) @ 25°C
- 120A (Tc)
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