STP9NM50N
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Product Paramters
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Vgs (Max)
- ±25V
- Technology
- MOSFET (Metal Oxide)
- Supplier Device Package
- TO-220AB
- Series
- MDmesh™
- Rds On (Max) @ Id, Vgs
- 560 mOhm @ 3.7A, 10V
- Power Dissipation (Max)
- 70W (Tc)
- Packaging
- Tube
- Package / Case
- TO-220-3
- Other Names
- 497-7537-5
STP9NM50N-ND
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Mounting Type
- Through Hole
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds
- 570pF @ 50V
- Gate Charge (Qg) (Max) @ Vgs
- 20nC @ 10V
- FET Type
- N-Channel
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Drain to Source Voltage (Vdss)
- 500V
- Detailed Description
- N-Channel 500V 5A (Tc) 70W (Tc) Through Hole TO-220AB
- Current - Continuous Drain (Id) @ 25°C
- 5A (Tc)
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