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CSD25211W1015
MOSFET P-CH 20V 3.2A 6DSBGA
Lead free / RoHS Compliant
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Product Paramters
- Vgs(th) (Max) @ Id
- 1.1V @ 250µA
- Vgs (Max)
- -6V
- Technology
- MOSFET (Metal Oxide)
- Supplier Device Package
- 6-DSBGA (1x1.5)
- Series
- NexFET™
- Rds On (Max) @ Id, Vgs
- 33 mOhm @ 1.5A, 4.5V
- Power Dissipation (Max)
- 1W (Ta)
- Packaging
- Tape & Reel (TR)
- Package / Case
- 6-UFBGA, DSBGA
- Other Names
- 296-36578-2
CSD25211W1015-ND
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Mounting Type
- Surface Mount
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds
- 570pF @ 10V
- Gate Charge (Qg) (Max) @ Vgs
- 4.1nC @ 4.5V
- FET Type
- P-Channel
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 2.5V, 4.5V
- Drain to Source Voltage (Vdss)
- 20V
- Detailed Description
- P-Channel 20V 3.2A (Ta) 1W (Ta) Surface Mount 6-DSBGA (1x1.5)
- Current - Continuous Drain (Id) @ 25°C
- 3.2A (Ta)
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