Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > CSD25213W10
CSD25213W10
MOSFET P-CH 20V 1.6A 4DSBGA
Lead free / RoHS Compliant
Request Price & Lead Time
CSD25213W10 are available, We can supply CSD25213W10, use the request quote form to request CSD25213W10 pirce and lead time.Atosn.com a professional electronic components distributor.We have large inventory and can fast delivery,Contact us today and our sales representative will provide you price and the shipment details on Part# CSD25213W10.Include customs clearance issues to match your country,We have professional sales team and technical team,We look forward to working with you.
Request Quote
Product Paramters
- Vgs(th) (Max) @ Id
- 1.1V @ 250µA
- Vgs (Max)
- -6V
- Technology
- MOSFET (Metal Oxide)
- Supplier Device Package
- 4-DSBGA (1x1)
- Series
- NexFET™
- Rds On (Max) @ Id, Vgs
- 47 mOhm @ 1A, 4.5V
- Power Dissipation (Max)
- 1W (Ta)
- Packaging
- Cut Tape (CT)
- Package / Case
- 4-UFBGA, DSBGA
- Other Names
- 296-40004-1
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Mounting Type
- Surface Mount
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Manufacturer Standard Lead Time
- 35 Weeks
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds
- 478pF @ 10V
- Gate Charge (Qg) (Max) @ Vgs
- 2.9nC @ 4.5V
- FET Type
- P-Channel
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 2.5V, 4.5V
- Drain to Source Voltage (Vdss)
- 20V
- Detailed Description
- P-Channel 20V 1.6A (Ta) 1W (Ta) Surface Mount 4-DSBGA (1x1)
- Current - Continuous Drain (Id) @ 25°C
- 1.6A (Ta)
Similar Products
- CSD25213W10
- CSD25213W10 data sheet
- CSD25213W10 datasheet
- CSD25213W10 pdf datasheet
- Download CSD25213W10 datasheet
- CSD25213W10 image
- CSD25213W10 part